Over-voltage protection circuit

ABSTRACT

A device is disclosed that includes a first transistor, a second transistor, and a first PODE device. The second transistor is electrically coupled to the first transistor. The first PODE device is adjacent to a drain/source region of the second transistor. A control end of the first PODE device is electrically coupled to a drain/source end of the second transistor.

CROSS REFERENCE TO RELATED APPLICATION

This application is a continuation of U.S. application Ser. No.15/171,950, filed Jun. 2, 2016, the disclosure of which is herebyincorporated by reference herein in its entirety.

BACKGROUND

A circuit typically includes a number of components including, forexample, transistors and passive components. In that circuit, atransistor breaks down when receiving an over voltage. Thus, anover-voltage protection circuit configured to prevent the transistors inthe circuit from receiving over voltages is used.

BRIEF DESCRIPTION OF THE DRAWINGS

Aspects of the present disclosure are best understood from the followingdetailed description when read with the accompanying figures. It isnoted that, in accordance with the standard practice in the industry,various features are not drawn to scale. In fact, the dimensions of thevarious features may be arbitrarily increased or reduced for clarity ofdiscussion.

FIG. 1A is a schematic diagram of an over-voltage protection circuit, inaccordance with some embodiments of the present disclosure.

FIG. 1B is an equivalent circuit diagram of an equivalent transistor inFIG. 1A in accordance with some embodiments of the present disclosure.

FIG. 1C is a schematic layout in a Fin Field-Effect Transistor (FinFET)structure including structures corresponding to the transistor with aPODE device in FIG. 1B in accordance with some embodiments of thepresent disclosure.

FIG. 2A is a schematic diagram of an over-voltage protection circuit inaccordance with some other embodiments of the present disclosure.

FIG. 2B is an equivalent circuit diagram of the equivalent transistor inFIG. 2A, in accordance with some embodiments of the present disclosure.

FIG. 3 is a schematic diagram of an over-voltage protection circuitincluding configurations corresponding to the over-voltage protectioncircuit in FIG. 1A and the over-voltage protection circuit in FIG. 2A,in accordance with various embodiments of the present disclosure.

FIG. 4 is a schematic diagram of an over-voltage protection circuit, inaccordance with alternative embodiments.

DETAILED DESCRIPTION

The following disclosure provides many different embodiments, orexamples, for implementing different features of the provided subjectmatter. Specific examples of components and arrangements are describedbelow to simplify the present disclosure. These are, of course, merelyexamples and are not intended to be limiting. For example, the formationof a first feature over or on a second feature in the description thatfollows may include embodiments in which the first and second featuresare formed in direct contact, and may also include embodiments in whichadditional features may be formed between the first and second features,such that the first and second features may not be in direct contact. Inaddition, the present disclosure may repeat reference numerals and/orletters in the various examples. This repetition is for the purpose ofsimplicity and clarity and does not in itself dictate a relationshipbetween the various embodiments and/or configurations discussed.

Reference is made to FIG. 1A. FIG. 1A is a schematic diagram of anover-voltage protection circuit 100, in accordance with some embodimentsof the present disclosure.

As illustratively shown in FIG. 1A, the over-voltage protection circuit100 includes a transistor T1 and an equivalent transistor T2PD includinga transistor T2 with an equivalent polys on OD edge (PODE) device PD1(equivalently shown in FIG. 1B). In some embodiments, the transistor T1is a P-type transistor having a source end, a drain end, and a gate end.The source end of the transistor T1 is electrically coupled to a voltagesource having a voltage level VDDQ, for example, 1.2 volts. The drainend of the transistor T1 is electrically coupled to the transistor T2,and the gate end of the transistor T1 is configured to receive a controlsignal CT1. In some embodiments, the voltage level of the control signalCT1 is varied between the voltage level VDDQ and the voltage level VDDQminus a voltage level VDD, for example, VDD=0.8 volts. The voltage levelof the control signal CT1 described above is given for illustrativepurposes. Various voltage levels of the control signal CT1 are withinthe contemplated scope of the present disclosure.

In some embodiments, the transistor T2 is a P-type transistor having asource end, a drain end, and a gate end. The source end of thetransistor T2 is electrically coupled to the drain end of the transistorT1, the drain end of the transistor T2 is electrically coupled to theequivalent PODE device PD1 (as illustrated in FIG. 1B) and an output endOPT of the over-voltage protection circuit 100, and the gate end of thetransistor T2 is configured to receive a control voltage CT2. In someembodiments, the control voltage CT2 is a variable voltage. In someother embodiments, the control voltage CT2 is a fixed voltage.

In various embodiments, the voltage level of the control voltage CT2 isvaried between the voltage level VDDQ and the voltage level VDDQ minusthe voltage level VDD, but is not limited in this regard. In alternativeembodiments, the voltage level of the control voltage CT2 is the voltagelevel VDDQ minus the voltage level VDD. Various voltage levels of thecontrol voltage CT2 are within the contemplated scope of the presentdisclosure.

For illustration, when the gate end of the transistor T2 receives avoltage with, for example, 0.4 volts, an operating voltage of the sourceend of the transistor T2 is clamped at a voltage level equal to 0.4volts plus Vth_T2, in which Vth_T2 indicates a threshold voltage of thetransistor T2. With such a configuration, a voltage difference of thesource end and drain end of the transistor T1 is able to be kept withinthe breakdown voltage, for example, 0.8 volts of the transistor T1, soas to prevent the transistor T1 from breaking down. Effectively, thetransistor T2 is operated as a protection transistor.

In this document, the terms “comprise” or “comprising,” “include” or“including,” “have” or “having,” and the like used in this document areto be understood to be open-ended, i.e., to mean including but notlimited to.

In addition, when an element is referred to as being “electricallycoupled” to another element, it can be directly coupled or coupled tothe other element, or intervening elements may be present. Moreover,“electrically connect” can further be referred to as the interoperationor interaction between two or more elements.

Reference is also made to FIG. 1B. FIG. 1B is an equivalent circuitdiagram of the equivalent transistor T2PD in FIG. 1A, in accordance withsome embodiments of the present disclosure. For illustration in FIG. 1B,the equivalent transistor T2PD includes the transistor T2 and theequivalent PODE device PD1. The equivalent PODE device PD1 iselectrically coupled to the drain end of the transistor T2. In someembodiments, the equivalent PODE device PD1 is equivalent to andoperated as a transistor, as illustrated in FIG. 1B.

In some embodiments, the equivalent PODE device PD1 is a P-typetransistor having a source end, a drain end, a gate end, and a body end.For illustration in FIG. 1B, the source end of the equivalent PODEdevice PD1 and the drain end of the equivalent PODE device PD1 areelectrically coupled to each other, and are electrically coupled to thedrain end of the transistor T2. The gate end of the equivalent PODEdevice PD1 is electrically coupled to the source end of the equivalentPODE device PD1, the drain end of the equivalent PODE device PD1, andthe drain end of the transistor T2. The body end of the equivalent PODEdevice PD1 is electrically coupled to the voltage source having thevoltage level VDDQ. In some other embodiments, the body end of theequivalent PODE device PD1 is electrically coupled to a body end T2BD ofthe transistor T2.

In some approaches, a gate end of PODE device coupled to a protectiontransistor is electrically coupled to the voltage source with thevoltage level VDDQ. In such a configuration, when the voltage level ofthe drain end of the transistor, coupled to the PODE device, is, forexample, 0 volt, the PODE device with a breakdown voltage lower than,for example, 1.2 volts, would be damaged.

Compared to the approaches above, in the present disclosure, the sourceend, the drain end, and the gate end of the equivalent PODE device PD1are electrically coupled to a same node, for illustration, the drain endof the transistor T2. Therefore, when the voltage level of the drain endof the transistor T2 is 0 volt, the voltage differences among the sourceend, the drain end, and the gate end of the equivalent PODE device PD1would be 0. Accordingly, breakdown of the equivalent PODE device PD1 isprevented.

As discussed above, the source end, the drain end, and the gate end ofthe equivalent PODE device PD1 are electrically coupled to a same node.Accordingly, a leakage current will not be generated by the equivalentPODE device PD1.

The configurations of the transistor T2 with the equivalent PODE devicePD1 in FIG. 1A and FIG. 1B are given for illustrative purposes. Variousconfigurations of the transistor T2 with the equivalent PODE device PD1are within the contemplated scope of the present disclosure. Forexample, in some alternative embodiments, the equivalent PODE device PD1is electrically coupled to the source end of the transistor T2 on abasis of actual requirements.

Reference is also made to FIG. 1C. FIG. 1C is a schematic layout 102 ina Fin Field-Effect Transistor (FinFET) structure including structurescorresponding to the transistor T2 with the equivalent PODE device PD1in FIG. 1B, in accordance with some embodiments of the presentdisclosure. For simplicity, the schematic layout 102 in FIG. 1Cillustrates and labels a portion of the structures corresponding to thetransistor T2 with the equivalent PODE device PD1 in FIG. 1B. Forsimplicity of illustration, only the equivalent PODE device PD1 and thetransistor T2 in FIG. 1C are discussed, and the other portions of theschematic layout 102 are not further discussed herein.

In some embodiments, the schematic layout 102 includes an active regionFN, gate conductors GT, and the equivalent PODE device PD1. In someembodiments, the active region FN includes one or more fin structures(not shown) for forming, for example, the FinFET. In variousembodiments, at least one fin structure is formed on, or formed with,the active region FN. In some embodiments, the term “active region”discussed in the present disclosure is also referred to as “OD” (oxidedimensioned area).

In some embodiments, the active region FN is formed by usingsemiconductor material. In some other embodiments, the active region FNis formed by using silicon on insulator (SOI) technology.

In some embodiments, the active region FN has at least one source regionS and at least one drain region D. For illustration in FIG. 1C, theactive region FN has source regions S and drain regions D, in which onesource region S and one drain region D are formed at two sides of onegate conductor GT. In some embodiments, the source region S and thedrain region D are located at two sides of a channel region (not shown)beneath the gate conductor GT. In some embodiments, the source region Sand the drain region D are source doped region and drain doped region,respectively.

In some embodiments, the gate conductor GT is implemented by usingpolysilicon, metal or doped polysilicon. In some embodiments, the gateconductor GT is formed over the active region FN. In some embodiments,the gate conductor GT, a channel region (not shown) beneath the gateconductor GT, and the source region S and drain regions D at two sidesof the gate conductor GT, form a transistor. In such embodiments, thegate conductor GT and the source region S and drain regions D serve as agate end, a source end, and a drain end of a transistor, respectively.

For illustration in FIG. 1C, the transistor T2 includes a source regionS, a drain region D, a gate conductor GT, and the channel region (notshown) beneath the gate conductor GT. The source region S, the drainregion D, and the gate conductor GT respectively serve as the sourceend, the drain end, and the gate end of the transistor T2 as illustratedin FIG. 1B. Moreover, the drain region D of the transistor T2 isadjacent to and electrically coupled to the equivalent PODE device PD1,as illustrated in FIG. 1B.

For further illustration in FIG. 1C, the equivalent PODE device PD1includes a gate PDG which serves as a gate end of the equivalent PODEdevice PD1 as illustrated in FIG. 1B. In some embodiments, the gate PDGis implemented by polysilicon or doped polysilicon. In some embodiments,the gate PDG of the equivalent PODE device PD1 is formed over an end, orcovers an edge, of the active region FN, as illustrated in FIG. 1C, toprotect the end of the active region FN during processing. In someembodiments, the gate PDG of the equivalent PODE device PD1 is a dummystructure in the schematic layout 102.

In some embodiments, the drain region D between the gate PDG and thegate conductor GT of the transistor T2, as shown in FIG. 1C, also servesas a source end and/or a drain end of the equivalent PODE device PD1 asillustrated in FIG. 1B.

In some embodiments, the gate PDG of the equivalent PODE device PD1 iselectrically coupled to the drain region D (i.e., the drain end) of thetransistor T2 via a conductor CT. In some embodiments, the conductor CTis a local conductive segment which is also referred to as “M0_PO” insome embodiments.

In some embodiments, the conductor CT is an extended portion of theequivalent PODE device PD1, which is coupled to the drain region D ofthe transistor T2. In some other embodiments, the conductor CT is abutted contact to couple the gate PDG of the equivalent PODE device PD1and the drain of the transistor T2. In alternative embodiments, theconductor CT couples the gate PDG of the equivalent PODE device PD1 tothe drain region D of the transistor T2 through contacts (not shown) andmetal layers (not shown). By using the conductor CT, the gate end of theequivalent PODE device PD1 is able to be electrically coupled to thesource end and drain end of the equivalent PODE device PD1, asillustrated in FIG. 1B.

The configurations of the equivalent PODE device PD1 adjacent to thedrain region D of the transistor T2 in FIG. 1C are given forillustrative purposes. Various configurations of the equivalent PODEdevice PD1 are within the contemplated scope of the present disclosure.For example, in various embodiments, the equivalent PODE device PD1 isadjacent to the source region S of the transistor T2 on a basis ofactual requirements.

In addition, the configurations of the equivalent PODE device PD1electrically coupled to the drain region D of the transistor T2 in FIG.1C are given for illustrative purposes. Various configurations of theequivalent PODE device PD1 are within the contemplated scope of thepresent disclosure. For example, in various embodiments, the equivalentPODE device PD1 is electrically coupled to the source region S of thetransistor T2 on a basis of actual requirements.

Reference is made to FIG. 2A. FIG. 2A is a schematic diagram of anover-voltage protection circuit 200, in accordance with some otherembodiments of the present disclosure.

In some embodiments, the over-voltage protection circuit 200 includes atransistor T3 and an equivalent transistor T4PD including a transistorT4 with an equivalent PODE device PD2 (equivalently shown in FIG. 2B).In some embodiments, the transistor T3 is an N-type transistor having asource end, a drain end, and a gate end. The source end of thetransistor T3 is electrically coupled to a voltage source having avoltage level VSS, for example, 0 volt, the drain end of the transistorT3 is electrically coupled to the transistor T4, and the gate end of thetransistor T3 is configured to receive a control signal CT3. In someembodiments, the voltage level of the control signal CT3 is variedbetween a voltage level VDD and the voltage level VSS. The voltage levelof the control signal CT3 described above is given for illustrativepurposes. Various voltage levels of the control signal CT3 are withinthe contemplated scope of the present disclosure.

In some embodiments, the transistor T4 is an N-type transistor having asource end, a drain end, and a gate end. The source end of thetransistor T4 is electrically coupled to the drain end of the transistorT3, the drain end of the transistor T4 is electrically coupled to anoutput end OPT of the over-voltage protection circuit 200, and the gateend of the transistor T4 is configured to receive a control voltage CT4.In some embodiments, the control voltage CT4 is a variable voltage. Insome other embodiments, the control voltage CT2 is a fixed voltage.

In various embodiments, the voltage level of the control voltage CT4 isvaried between the voltage level VDD and the voltage level VSS, but isnot limited in this regard. In alternative embodiments, the voltagelevel of the control voltage CT4 is the voltage level VDD. Variousvoltage levels of the control voltage CT4 are within the contemplatedscope of the present disclosure.

For illustration, when the gate end of the transistor T4 receives avoltage with, for example, 0.8 volts, an operating voltage of the sourceend of the transistor T4 is clamped at a voltage level equal to 0.8volts minus Vth_T4, in which Vth_T4 indicates a threshold voltage of thetransistor T4. With such a configuration, a voltage difference of thesource end and drain end of the transistor T3 is able to be kept withinthe breakdown voltage, for example, 0.8 volts of the transistor T3, soas to prevent the transistor T3 from breaking down. Effectively, thetransistor T4 is operated as a protection transistor.

Reference is also made to FIG. 2B. FIG. 2B is an equivalent circuitdiagram of the equivalent transistor T4PD in FIG. 2A, in accordance withsome embodiments of the present disclosure. For illustration in FIG. 2B,the equivalent transistor T4PD includes the transistor T4 and theequivalent PODE device PD2. The equivalent PODE device PD2 iselectrically coupled to the drain end of the transistor T4. In someembodiments, the equivalent PODE device PD2 is equivalent to andoperated as a transistor.

In some embodiments, the equivalent PODE device PD2 is an N-typetransistor having a source end, a drain end, a gate end, and a body end.For illustration in FIG. 2B, the source end of the PODE device PD2 andthe drain end of the PODE device PD2 are electrically coupled to eachother, and are electrically coupled to the drain end of the transistorT4. The gate end of the PODE device PD2 is electrically coupled to thesource end of the PODE device PD2, the drain end of the PODE device PD2,and the drain end of the transistor T4. The body end of the PODE devicePD2 is electrically coupled to the voltage source having the voltagelevel VSS. In some other embodiments, the body end of the equivalentPODE device PD2 is electrically coupled to a body end T4BD of thetransistor T4.

In some approaches, a gate end of the PODE device coupled to aprotection transistor is electrically coupled to the voltage source withthe voltage level VSS. In such a configuration, when the voltage levelof the drain end of the transistor coupled to the PODE device is, forexample, 1.2 volts, the PODE device with a breakdown voltage lower than,for example, 1.2 volts, would be damaged.

Compared to the approaches above, in the present disclosure, the sourceend, the drain end, and the gate end of the PODE device PD2 areelectrically coupled to a same node, for illustration, the drain end ofthe transistor T4. Therefore, when the voltage level of the drain end ofthe transistor T4 is 1.2 volts, the voltage differences among the sourceend, the drain end, and the gate end of the PODE device PD2 would be 0.Accordingly, breakdown of the PODE device PD2 is prevented.

As discussed above, the source end, the drain end, and the gate end ofthe PODE device PD2 are electrically coupled to a same node.Accordingly, a leakage current will not be generated by the PODE devicePD2.

In some embodiments, the schematic layout of structures corresponding tothe transistor T4 and the PODE device PD2 is similar to the schematiclayout 102 of structures corresponding to the transistor T2 and theequivalent PODE device PD1, as illustrated in FIG. 1C. Accordingly, thediscussion of the schematic layout of structures corresponding to thetransistor T4 and the equivalent PODE device PD2 is not further detailedherein.

Reference is made to FIG. 3. FIG. 3 is a schematic diagram of anover-voltage protection circuit 300 including configurationscorresponding to the over-voltage protection circuit 100 in FIG. 1A andthe over-voltage protection circuit 200 in FIG. 2A, in accordance withvarious embodiments of the present disclosure.

In some embodiments, the over-voltage protection circuit 300 includes atransistor TR1, a transistor TR2 with an equivalent PODE device (notshown), a transistor TR3, and a transistor TR4 with an equivalent PODEdevice (not shown). In some embodiments, the transistors TR1, TR2 areP-type transistors, and the transistors TR3 and TR4 are N-typetransistors.

For illustration in FIG. 3, the source end of the transistor TR1 iselectrically coupled to a voltage source having a voltage level VDDQ,for example, 1.2 volts, the drain end of the transistor TR1 iselectrically coupled to the transistor TR2, and the gate end of thetransistor TR1 is configured to receive a first control signal CR1. Insome embodiments, the voltage level of the first control signal CR1 isvaried between the voltage level VDDQ and the voltage level VDDQ minus avoltage level VDD, for example, 0.8 volts. The voltage level of thefirst control signal CR1 discussed above is given for illustrativepurposes. Various voltage levels of the control signal CR1 are withinthe contemplated scope of the present disclosure.

For illustration of the transistor TR2, the source end of the transistorTR2 is electrically coupled to the drain end of the transistor TR1, thedrain end of the transistor TR2 is electrically coupled to an output endOPT of the over-voltage protection circuit 300, and the gate end of thetransistor TR2 is configured to receive a control voltage CR2.

The control voltage CR2 is a variable voltage in some embodiments, or isa fixed voltage in some other embodiments. In various embodiments, thevoltage level of the control voltage CR2 is varied between the voltagelevel VDDQ and the voltage level VDDQ minus the voltage level VDD, butis not limited in this regard.

In alternative embodiments, the voltage level of the control voltage CR2is the voltage level VDDQ minus the voltage level VDD. Various voltagelevels of the control voltage CR2 are within the contemplate scope ofthe present disclosure.

For illustration of the transistor TR3, the source end of the transistorTR3 is electrically coupled to a voltage source having a voltage levelVSS, for example, 0 volt, the drain end of the transistor TR3 iselectrically coupled to the transistor TR4, and the gate end of thetransistor TR3 is configured to receive a second control signal CR3. Insome embodiments, the voltage level of the second control signal CR3 isvaried between a voltage level VDD, for example, 0.8 volts and thevoltage level VSS. The voltage level of the second control signal CR3discussed above is given for illustrative purposes. Various voltagelevels of the control signal CR3 are within the contemplated scope ofthe present disclosure.

For illustration of the transistor TR4, the source end of the transistorTR4 is electrically coupled to the drain end of the transistor TR3, thedrain end of the transistor TR4 is electrically coupled to the outputend OPT of the over-voltage protection circuit 300, and the gate end ofthe transistor TR4 is configured to receive a control voltage CR4.

The control voltage CR4 is a variable voltage in some embodiments, or isa fixed voltage in some other embodiments. In various embodiments, thevoltage level of the control voltage CR4 is varied between the voltagelevel VDD and the voltage level VSS, but is not limited in this regard.In alternative embodiments, the voltage level of the control voltage CR4is the voltage level VDD. Various voltage levels of the control voltageCR4 are within the contemplate scope of the present disclosure.

For illustration, when the gate end of the transistor TR2 receives avoltage with, for example, 0.4 volts, an operating voltage of the sourceend of the transistor TR2 is clamped at a voltage level equal to 0.4volts plus Vth_R2, in which Vth_R2 indicates a threshold voltage of thetransistor TR2. In addition, when the gate end of the transistor TR4receives a voltage with, for example, 0.8 volts, an operating voltage ofthe source end of the transistor TR4 is clamped at a voltage level equalto 0.8 volts minus Vth_R4, in which Vth_R4 indicates a threshold voltageof the transistor TR4. With such a configuration, voltage difference ofthe source end and drain end of each one of the transistors TR1, TR3 isable to be kept within the breakdown voltages, for example, 0.8 volts ofthe transistors TR1 and TR3, to prevent the transistors TR1, TR3 frombreaking down. Effectively, the transistor TR2 and TR4 are operated asprotection transistors.

In some embodiments, the transistor TR2 with the equivalent PODE device(not shown) in FIG. 3 have circuit configurations corresponding to thoseillustrated in FIG. 1B. Accordingly, the circuit configurations of thetransistor TR2 with the equivalent PODE device are not further detailedherein.

Correspondingly, in some embodiments, the transistor TR4 with theequivalent PODE device (not shown) in FIG. 3 have circuit configurationscorresponding to those illustrated in FIG. 2B. Accordingly, the circuitconfigurations of the transistor TR4 with the equivalent PODE device arenot further detailed herein.

In some embodiments, the schematic layout of structures corresponding tothe transistor TR2 with the equivalent PODE device is similar to theschematic layout 102 of structures corresponding to the transistor T2and the equivalent PODE device PD1 as illustrated in FIG. 1C.Accordingly, the schematic layout of structures corresponding to thetransistor TR2 and the equivalent PODE device is not further detailedherein.

Correspondingly, in some embodiments, the schematic layout of structurescorresponding to the transistor TR4 with the equivalent PODE device issimilar to the schematic layout 102 of structures corresponding to thetransistor T2 and the equivalent PODE device PD1 as illustrated in FIG.1C. Accordingly, the schematic layout of structures corresponding to thetransistor TR4 and the equivalent PODE device is not further detailedherein.

In such a configuration, no matter the voltage level of the drain end ofthe transistor TR2 or the transistor TR4 is 0 volt or 1.2 volts, thevoltage differences among the source end, the drain end, and the gateend of the PODE device would be 0 because the source end, the drain end,and the gate end of the PODE device are electrically coupled to eachother, as discussed above. Accordingly, the PODE device electricallycoupled to the transistor TR2, or the transistor TR4, is kept safe frombeing damaged.

As discussed above, the source end, the drain end, and the gate end ofthe PODE device that is electrically coupled to the transistor TR2, orthe transistor TR4, are electrically coupled to a same node in someembodiments. Accordingly, a leakage current of the PODE deviceelectrically coupled to the transistor TR2, or the transistor TR4, willnot be generated.

Reference is made to FIG. 4. FIG. 4 is a schematic diagram of anover-voltage protection circuit 400, in accordance with alternativeembodiments of the present disclosure.

For illustration in FIG. 4, the over-voltage protection circuit 400includes a transistor S1, a transistor S2 with a PODE device (notshown), a transistor S3 with a PODE device (not shown), a transistor S4,a transistor S5, a transistor S6 with a PODE device (not shown), atransistor S7 with a PODE device (not shown), a transistor S8, and aninverter INV. In some embodiments, the transistors S1, S2, S5, S6 areN-type transistors, and the transistors S3, S4, S7, S8 are P-typetransistors.

For illustration, the transistor S1 is electrically coupled between thetransistor S2 and a voltage source with the voltage level VSS, and isconfigured to receive an input signal ITS. The transistor S2 iselectrically coupled in cascade with the transistor S1. The transistorS3 is electrically coupled between an output end OPT of the over-voltageprotection circuit 400 and the transistor S2. The transistor S4 iselectrically coupled in cascade with the transistor S3, and iselectrically coupled between the output end OPT of the over-voltageprotection circuit 400 and a voltage source with the voltage level VDDQ.

In some embodiments, the inverter INV is configured to receive the inputsignal from an input end IPT of the over-voltage protection circuit 400,and is configured to output an inverted input signal IVS to control thetransistor S5.

For further illustration, the transistor S5 is electrically coupledbetween the transistor S6 and the voltage source with the voltage levelVSS, and is configured to receive the inverted input signal IVS. Thetransistor S6 is electrically coupled in cascade with the transistor S5.The transistor S7 is electrically coupled between a gate end of thetransistor S4 and the transistor S6. The transistor S8 is electricallycoupled in cascade with the transistor S7, and is electrically coupledbetween the gate of the transistor S4 and the voltage source with thevoltage level VDDQ, and is configured to receive the output signal fromthe output end OPT.

For illustration of operation, when the gate end of the transistor S3receives the a control voltage CS3 with, for example, 0.4 volts, theoperating voltage of the source end of the transistor S3 is clamped at avoltage level equal to 0.4 volts plus Vth_S3, in which Vth_S3 indicatesa threshold voltage of the transistor S3. When the gate end of thetransistor S7 receives a control voltage CS7 with, for example, 0.4volts, the operating voltage of the source end of the transistor S7 isclamped at voltage level equal to 0.4 volts plus Vth_S7, in which Vth_S7indicates a threshold voltage of the transistor S7. When the gate end ofthe transistor S2 receives a control voltage CS2 with, for example, 0.8volts, operating voltage of the source end of the transistor S2 isclamped at voltage level equal to 0.8 volts minus Vth_S2, in whichVth_S2 indicates a threshold voltage of the transistor S2. When the gateend of the transistor S6 receives a control voltage CS6 with, forexample, 0.8 volts, operating voltage of the source end of thetransistor S6 is clamped at voltage level equal to 0.8 volts minusVth_S6, in which Vth_S6 indicates a threshold voltage of the transistorS6.

With such a configuration in FIG. 4, the voltage difference of thesource end and drain end of each one of the transistors S1, S4, S5, S8is able to be kept within the breakdown voltages of the transistors S1,S4, S5, S8, as discussed above, to prevent the transistors S1, S4, S5,S8 from breaking down. Effectively, the transistors S2, S3, S6, S7 areoperated as protection transistors.

In some embodiments, the transistor S3 with the equivalent PODE device(not shown) in FIG. 4 have circuit configurations corresponding to thoseillustrated in FIG. 1B. Accordingly, the circuit configurations of thetransistor S3 with the equivalent PODE device are not further detailedherein. In some embodiments, the transistor S7 with the equivalent PODEdevice (not shown) in FIG. 4 also have circuit configurationscorresponding to those illustrated in FIG. 1B. Accordingly, the circuitconfigurations of the transistor S7 with the equivalent PODE device arenot further detailed herein.

Correspondingly, in some embodiments, the transistor S2 with theequivalent PODE device (not shown) in FIG. 4 have circuit configurationscorresponding to those illustrated in FIG. 2B. Accordingly, the circuitconfigurations of the transistor S2 with the equivalent PODE device arenot further detailed herein. In some embodiments, the transistor S6 withthe equivalent PODE device (not shown) in FIG. 4 also have circuitconfigurations corresponding to those illustrated in FIG. 2B.Accordingly, the circuit configurations of the transistor S6 with theequivalent PODE device are not further detailed herein.

In such a configuration in FIG. 4, when the drain ends of thetransistors S2, S3, S6, S7, which, for illustration, are labeled asnodes A and B, have varying voltage levels, the voltage difference amongthe source end, the drain end, and the gate end of each one of theequivalent PODE devices with the transistors S2, S3, S6, S7 would be 0.Accordingly, the equivalent PODE devices with the transistors S2, S3,S6, S7 are kept from breaking down.

As discussed above, the source end, the drain end, and the gate end ofthe PODE device that is electrically coupled to one of the transistorsS2, S3, S6, S7 are electrically coupled to a same node in someembodiments. Accordingly, a leakage current of the PODE deviceelectrically coupled to one of the transistors S2, S3, S6, S7 will notbe generated.

In some embodiments, a device is disclosed that includes a firsttransistor and a first PODE device. The first PODE device includes agate, wherein the gate of the first PODE device is electrically coupledto a drain/source region of the first transistor.

Also disclosed is a device that includes an over-voltage protectioncircuit. The over-voltage protection circuit includes a first protectiontransistor with a first PODE device, wherein the first PODE device isconfigured to be controlled by a voltage at a drain/source end of thefirst protection transistor.

Also disclosed is a device that includes a first transistor, a thirdtransistor, a fifth transistor, a seventh transistor, and at least onePODE device. The first transistor is electrically and serially coupledto a second transistor that is configured to receive an input signal.The third transistor is electrically coupled between an output end ofthe device and the first transistor, wherein the output end of thedevice is coupled through a fourth transistor to a voltage source. Thefifth transistor is electrically and serially coupled to a sixthtransistor that is configured to receive an inverted input signal. Theseventh transistor is electrically coupled between a control end of thefourth transistor and the fifth transistor, wherein the seventhtransistor is coupled to the voltage source through an eighth transistorthat has a control end coupled to the output end of the device. The atleast one PODE device includes a gate, wherein the gate of the at leastone PODE device is electrically coupled to a drain/source region of thefirst transistor, the third transistor, the fifth transistor, theseventh transistor, or a combination thereof.

The foregoing outlines features of several embodiments so that thoseskilled in the art may better understand the aspects of the presentdisclosure. Those skilled in the art should appreciate that they mayreadily use the present disclosure as a basis for designing or modifyingother processes and structures for carrying out the same purposes and/orachieving the same advantages of the embodiments introduced herein.Those skilled in the art should also realize that such equivalentconstructions do not depart from the spirit and scope of the presentdisclosure, and that they may make various changes, substitutions, andalterations herein without departing from the spirit and scope of thepresent disclosure.

What is claimed is:
 1. A device comprising: a first transistor; and afirst polys on OD edge (PODE) device comprising a gate, wherein the gateof the first PODE device is electrically coupled to a drain/sourceregion of the first transistor.
 2. The device as claimed in claim 1,wherein a source end and a drain end of the first PODE device areelectrically coupled to each other.
 3. The device as claimed in claim 1,wherein a source end and a drain end of the first PODE device areelectrically coupled to the gate of the first PODE device.
 4. The deviceas claimed in claim 1, further comprising: a conductor coupling the gateof the first PODE device to a drain/source end of a second transistor.5. The device as claimed in claim 4, wherein a source end of the firsttransistor is electrically coupled to a voltage source, a drain end ofthe first transistor is electrically coupled to the source end of thesecond transistor, and a drain end of the second transistor iselectrically coupled to an output end of the device.
 6. The device asclaimed in claim 4 further comprising: a third transistor, wherein asource end of the third transistor is electrically coupled to a voltagesource; and a fourth transistor, wherein a source end of the fourthtransistor is electrically coupled to a drain end of the thirdtransistor, and a drain end of the fourth transistor is electricallycoupled to an output end of the device and the drain end of the secondtransistor.
 7. The device as claimed in claim 6, further comprising: asecond PODE device comprising a gate, wherein the gate of the secondPODE device is electrically coupled to the drain end of the fourthtransistor.
 8. The device as claimed in claim 6, wherein the firsttransistor and the second transistor are transistors of a first type,and the third transistor and the fourth transistor are transistors of asecond type.
 9. A device comprising: an over-voltage protection circuitcomprising: a first protection transistor with a first PODE device,wherein the first PODE device is configured to be controlled by avoltage at a drain/source end of the first protection transistor. 10.The device as claimed in claim 9, wherein a source end and a drain endof the first PODE device are electrically coupled to each other.
 11. Thedevice as claimed in claim 9, wherein a source end and a drain end ofthe first PODE device are electrically coupled to a control end of thefirst PODE device.
 12. The device as claimed in claim 9, furthercomprising: a conductor configured to electrically connect a gate of thefirst PODE device to the drain/source end of the first protectiontransistor.
 13. The device as claimed in claim 9, wherein theover-voltage protection circuit further comprises: a first transistor,wherein a source end of the first transistor is electrically coupled toa first voltage source; wherein a source end of the first protectiontransistor is electrically coupled to a drain end of the firsttransistor and a drain end of the first protection transistor iselectrically coupled to an output end of the over-voltage protectioncircuit.
 14. The device as claimed in claim 13, wherein the over-voltageprotection circuit further comprises: a second transistor; and a secondprotection transistor with a second PODE device, wherein the secondprotection transistor is electrically and serially coupled to the firsttransistor, the first protection transistor, and the second transistor,and a control end of the second PODE device is electrically coupled to adrain/source end of the second protection transistor.
 15. The device asclaimed in claim 14, wherein a source end of the second transistor iselectrically coupled to a second voltage source, a drain end of thesecond transistor is electrically coupled to the source end of thesecond protection transistor, and a drain end of the second protectiontransistor is electrically coupled to the output end of the over-voltageprotection circuit and the drain end of the first protection transistor.16. A device comprising: a first transistor electrically and seriallycoupled to a second transistor that is configured to receive an inputsignal; a third transistor electrically coupled between an output end ofthe device and the first transistor, wherein the output end of thedevice is coupled through a fourth transistor to a voltage source; afifth transistor electrically and serially coupled to a sixth transistorthat is configured to receive an inverted input signal; a seventhtransistor electrically coupled between a control end of the fourthtransistor and the fifth transistor, wherein the seventh transistor iscoupled to the voltage source through an eighth transistor that has acontrol end coupled to the output end of the device; and at least onePODE device comprising a gate, wherein the gate of the at least one PODEdevice is electrically coupled to a drain/source region of the firsttransistor, the third transistor, the fifth transistor, the seventhtransistor, or a combination thereof.
 17. The device as claimed in claim16, wherein a source end and a drain end of the at least one PODE deviceare electrically coupled to each other.
 18. The device as claimed inclaim 16, wherein a source end and a drain end of the at least one PODEdevice are electrically coupled to the gate of the at least one PODEdevice.
 19. The device as claimed in claim 16, further comprising: aconductor configured to electrically connect the gate of the at leastone PODE device to the drain/source region of the first transistor, thethird transistor, the fifth transistor, the seventh transistor, or acombination thereof.
 20. The device as claimed in claim 16, wherein thefirst transistor, the second transistor, the fifth transistor, and thesixth transistor are N-type transistors, and the third transistor, thefourth transistor, the seventh transistor, and the eighth transistor areP-type transistors.